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onsemi DTC114EM3T5GRoHS

Manufacturer
MPN
DTC114EM3T5G
LCSC Part #
C463449
Packaging
SOT-723-3
Customer #
Key Attributes
50V 35 100mA 260mW NPN 1 NPN (Pre-Biased) SOT-723-3 Single, Pre-Biased Bipolar Transistors RoHS
Datasheetpdf icononsemi DTC114EM3T5G
In-Stock: 120
120 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1057$ 0.53
50+$ 0.1034$ 5.17
150+$ 0.102$ 15.30
500+$ 0.1005$ 50.25
Standard Packaging8000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufactureronsemi
PackagingSOT-723-3
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain35
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation260mW
Voltage - Input(Max)(VI(off))800mV@100uA,5.0V
Input Voltage (VI(on)@Ic,Vce)2.5V@10mA,0.3V
typeNPN
Number1 NPN (Pre-Biased)

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. Using BRTs reduces system cost and saves board space.

Features

AI Translation
  • Simplified circuit design
  • Reduced PCB space
  • Fewer component count
  • S and NSV prefixes for automotive and other applications requiring unique site of manufacture and controlled change requirements; AEC-Q101 qualified with PPAP capability
  • Pb-free, halogen-free/BFR-free, and RoHS compliant