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onsemi NSVMUN5111DW1T3G product image
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onsemi NSVMUN5111DW1T3GRoHS

Manufacturer
MPN
NSVMUN5111DW1T3G
LCSC Part #
C463398
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS 50V SOT-363
Datasheetpdf icononsemi NSVMUN5111DW1T3G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
DC Current Gain35
Vce Saturation(VCE(sat))250mV
typePNP
Input Resistor10kΩ
Resistor Ratio1
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)2.2V@10mA,200mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
In-Stock: 9,585
9,585 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0719$ 0.36
50+$ 0.0625$ 3.13
150+$ 0.0577$ 8.66
500+$ 0.0542$ 27.10
2,500+$ 0.0514$ 128.50
5,000+$ 0.05$ 250.00
Standard Packaging10000/Full Reel
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