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onsemi FQB5N90TMRoHS

Manufacturer
onsemi
MPN
FQB5N90TM
LCSC Part #
C463024
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 900V 5.4A D2PAK
Datasheetpdf icononsemi FQB5N90TM
In-Stock: 938
938 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.9806$ 1.98
10+$ 1.6619$ 16.62
30+$ 1.4619$ 43.86
100+$ 1.257$ 125.70
500+$ 1.1643$ 582.15
800+$ 1.1253$ 900.24
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingD2PAK
Drain to Source Voltage900V
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation158W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)2.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.55nF
Gate Charge(Qg)40nC@720V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

AI Translation
  • 5.4 A, 900 V, RDS(on)=2.3 Ω (Max.) @ ID=2.7 A
  • Low Gate Charge (Typ. 31 nC)
  • Low Crss (Typ. 13 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • switched mode power supplies
  • active power factor correction (PFC)
  • electronic lamp ballasts