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onsemi FDMS8050
| Manufacturer | |
| MPN | FDMS8050 |
| LCSC Part # | C463000 |
| Packaging | Power-56-8 |
| Customer # | |
| Key Attributes | 30V 200A 1.8V 156W 0.65mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDMS8050 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 0.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22.61nF | |
| Gate Charge(Qg) | 285nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge and ultra-low rDS(on).
Features
AI Translation
- Maximum r DS(on) = 0.65 mΩ at V GS = 10 V, I D = 55 A
- Maximum r DS(on) = 0.9 mΩ at V GS = 4.5 V, I D = 47 A
- Advanced package and silicon combination for low r DS(on) and high efficiency
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
Applications
AI Translation
- Ideal Diode MOSFET
- Synchronous Rectifier
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 6.1957 | $ 6.20 |
| 200+ | $ 2.3989 | $ 479.78 |
| 500+ | $ 2.3146 | $ 1157.30 |
| 1,000+ | $ 2.2717 | $ 2271.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 0.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22.61nF | |
| Gate Charge(Qg) | 285nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge and ultra-low rDS(on).
Features
AI Translation
- Maximum r DS(on) = 0.65 mΩ at V GS = 10 V, I D = 55 A
- Maximum r DS(on) = 0.9 mΩ at V GS = 4.5 V, I D = 47 A
- Advanced package and silicon combination for low r DS(on) and high efficiency
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
Applications
AI Translation
- Ideal Diode MOSFET
- Synchronous Rectifier
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |