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onsemi FDT86113LZRoHS

Manufacturer
onsemi
MPN
FDT86113LZ
LCSC Part #
C462748
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 3.3A SOT-223
Datasheetpdf icononsemi FDT86113LZ
In-Stock: 63
63 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1371$ 1.14
10+$ 0.9321$ 9.32
30+$ 0.8199$ 24.60
100+$ 0.693$ 69.30
500+$ 0.6361$ 318.05
1,000+$ 0.6117$ 611.70
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-223
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)315pF
Gate Charge(Qg)6.8nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Features

AI Translation
  • Maximum rDS(on) = 100 mΩ at VGS = 10 V, ID = 3.3 A
  • Maximum rDS(on) = 145 mΩ at VGS = 4.5 V, ID = 2.7 A
  • High-performance trench technology for ultra-low rDS(on)
  • Industry-standard SMT package with high power and high current handling capability
  • Typical HBM ESD protection rating > 3 KV
  • 100% tested for unclamped inductive load (UIS)
  • RoHS compliant

Applications

AI Translation
  • DC - DC Switch
  • SOT-223