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DIODES ZXMN10A08DN8TARoHS

Manufacturer
DIODES
MPN
ZXMN10A08DN8TA
LCSC Part #
C461135
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 100V 2.1A SO-8
Datasheetpdf iconDIODES ZXMN10A08DN8TA
In-Stock: 262
262 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.0674$ 1.07
10+$ 0.8919$ 8.92
30+$ 0.7962$ 23.89
100+$ 0.6877$ 68.77
500+$ 0.6398$ 319.90
1,000+$ 0.6175$ 617.50
2,000+$ 0.6111$ 1222.20
4,000+$ 0.6063$ 2425.20
Standard Packaging500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSO-8
Current - Continuous Drain(Id)2.1A
RDS(on)250mΩ@10V
Pd - Power Dissipation1.8W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)14.2pF
Number2 N-Channel
Input Capacitance(Ciss)405pF
Gate Charge(Qg)4.2nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)28.2pF
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Introduction

AI Translation

Next-generation trench MOSFETs feature a unique structure that combines low on-resistance with fast switching speed, making them ideal for high-efficiency, low-voltage power management applications.

Features

AI Translation
  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Thin SOIC package
  • Fully lead-free and RoHS compliant
  • Halogen and antimony free, "Green" device

Applications

AI Translation
  • DC-DC Converters - Power Management Functions - Disconnect Switches - Motor Control