DIODES DMN3033LSD-13
| Manufacturer | |
| MPN | DMN3033LSD-13 |
| LCSC Part # | C461012 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Operating Temperature | -55℃~+150℃ |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-Channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 high-reliability qualified
Applications
AI Translation
- Backlighting
- Power management
- DC-DC converter
In-Stock: 925
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3523 | $ 1.76 |
| 50+ | $ 0.2804 | $ 14.02 |
| 150+ | $ 0.2495 | $ 37.43 |
| 500+ | $ 0.2111 | $ 105.55 |
| 2,500+ | $ 0.1939 | $ 484.75 |
| 5,000+ | $ 0.1837 | $ 918.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-Channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 high-reliability qualified
Applications
AI Translation
- Backlighting
- Power management
- DC-DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



