DIODES DMN3026LVT-7
| Manufacturer | |
| MPN | DMN3026LVT-7 |
| LCSC Part # | C461010 |
| Packaging | TSOT-23-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 6.6A TSOT-23-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "green" device
- AEC-Q101 qualified, high reliability
Applications
AI Translation
- DC-DC Converter
- Power Management
- Backlight Source
In-Stock: 510
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1256$ 0.0528 | $ 0.26 |
| 50+ | $ 0.1005$ 0.0423 | $ 2.12 |
| 150+ | $ 0.088$ 0.0370 | $ 5.55 |
| 500+ | $ 0.0786$ 0.0331 | $ 16.55 |
| 3,000+ | $ 0.0711$ 0.0299 | $ 89.70 |
| 6,000+ | $ 0.0673$ 0.0283 | $ 169.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "green" device
- AEC-Q101 qualified, high reliability
Applications
AI Translation
- DC-DC Converter
- Power Management
- Backlight Source
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



