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DIODES DGD2003S8-13 product image
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DIODES DGD2003S8-13RoHS

Manufacturer
DIODES
MPN
DGD2003S8-13
LCSC Part #
C460686
Packaging
SO-8
Customer #
Key Attributes
HALF-BRIDGE GATE DRIVER IN SO-8
Datasheetpdf iconDIODES DGD2003S8-13
In-Stock: 23
23 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.0126$ 0.6642$ 0.66
10+$ 1.718$ 0.5670$ 5.67
30+$ 1.5325$ 0.5058$ 15.17
100+$ 1.3438$ 0.4435$ 44.35
500+$ 1.2581$ 0.4152$ 207.60
1,000+$ 1.2222$ 0.4034$ 403.40
2,500+$ 1.2066$ 0.3982$ 995.50
5,000+$ 1.1973$ 0.3952$ 1976.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerDIODES
PackagingSO-8
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current350uA
Input Logic Level - High-
Voltage - Supply10V~20V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)600mA
Rise Time70ns
Fall Time35ns
FeaturesUnder Voltage Protection;Dead-time control;Interleaved conduction protection
Current - Output High(IOH)290mA
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The DGD2003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. High voltage processing techniques enable the DGD2003’s high side to switch to 200V in a bootstrap operation. The DGD2003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. The DGD2003 has a fixed internal deadtime of 420ns (typical). The DGD2003 is offered in the SO-8 package and operates over an extended -40°C to +125°C temperature range.

Features

AI Translation
  • Floating High-Side Driver in Bootstrap Operation to 200V
  • Drives Two N-Channel MOSFETs in a Half-Bridge Configuration
  • 290mA Source/600mA Sink Output Current Capability
  • Outputs Tolerant to Negative Transients
  • Internal Dead Time of 420ns to Protect MOSFETs
  • Wide Low Side Gate Driver Supply Voltage: 10V to 20V
  • Logic Input (HIN and LIN*) 3.3V Capability
  • Schmitt Triggered Logic Inputs
  • Undervoltage Lockout for High-Side and Low-Side Drivers
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony free. “Green” Device

Applications

AI Translation
  • Battery Power Tools and Appliances
  • Light Electric Vehicles (LEV)
  • Inverters