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Infineon IRF1010ZSTRLPBFRoHS

Manufacturer
Infineon
MPN
IRF1010ZSTRLPBF
LCSC Part #
C459933
Packaging
D2PAK
Customer #
Key Attributes
MOSFET 55V 75A D2PAK
Datasheetpdf iconInfineon IRF1010ZSTRLPBF
In-Stock: 129
129 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.0833$ 2.08
10+$ 1.7675$ 17.68
30+$ 1.5706$ 47.12
100+$ 1.3688$ 136.88
500+$ 1.2777$ 638.85
1,000+$ 1.2386$ 1238.60
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage55V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.84nF
Gate Charge(Qg)95nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free