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HXY MOSFET TPD1E0B04DPYR-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | TPD1E0B04DPYR-HXY |
| LCSC Part # | C45896885 |
| Packaging | DFN1006-2L |
| Customer # | |
| Key Attributes | ESD DIODE 3.3VWM 25VC DFN1006-2L |
| Datasheet |  HXY MOSFET TPD1E0B04DPYR-HXY |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 25V | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 135W | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 4.8V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The TPD1E0B04DPR protects sensitive semiconductor components from damage or failure caused by ESD and other voltage-induced transient events. Outstanding clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-exposed designs. It gives designers the flexibility to protect a single bidirectional line in applications where an array is not suitable.
Features
- Compact form factor
- Low profile body
- Peak power up to 135W under 8×20μs pulse
- Low leakage current
- Typical response time less than 1 ns
- ESD Class 3 Human Body Model
- DFN1006-2L package
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1399 | $ 0.70 |
| 50+ | $ 0.1185 | $ 5.93 |
| 150+ | $ 0.1077 | $ 16.16 |
| 500+ | $ 0.0997 | $ 49.85 |
| 2,500+ | $ 0.0933 | $ 233.25 |
| 5,000+ | $ 0.09 | $ 450.00 |
Standard Packaging10000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 25V | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 135W | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 4.8V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The TPD1E0B04DPR protects sensitive semiconductor components from damage or failure caused by ESD and other voltage-induced transient events. Outstanding clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-exposed designs. It gives designers the flexibility to protect a single bidirectional line in applications where an array is not suitable.
Features
- Compact form factor
- Low profile body
- Peak power up to 135W under 8×20μs pulse
- Low leakage current
- Typical response time less than 1 ns
- ESD Class 3 Human Body Model
- DFN1006-2L package
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |