HXY MOSFET HC2M0040065K

Manufacturer	HXY MOSFETAsian Brands
MPN	HC2M0040065K
LCSC Part #	C45896863
Packaging	TO-247-4L
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET HC2M0040065K

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247-4L
Drain to Source Voltage	650V
Output Capacitance(Coss)	130pF
Current - Continuous Drain(Id)	49A
Operating Temperature -	-40℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	241W
RDS(on)	59mΩ
Reverse Transfer Capacitance (Crss@Vds)	16pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	69.9nC
Type	N-Channel

In-Stock: 5

5 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 10.8991	$ 10.90
10+	$ 9.4044	$ 94.04
30+	$ 8.4916	$ 254.75
90+	$ 7.7281	$ 695.53
Standard Packaging30/Full Tube

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247-4L
Drain to Source Voltage	650V
Output Capacitance(Coss)	130pF
Current - Continuous Drain(Id)	49A
Operating Temperature -	-40℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	241W
RDS(on)	59mΩ
Reverse Transfer Capacitance (Crss@Vds)	16pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	69.9nC
Type	N-Channel