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HXY MOSFET CMS120N080B-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
CMS120N080B-HXY
LCSC Part #
C45896862
Packaging
TO-263-7L
Customer #
Key Attributes
SiC Power MOSFET N-Channel Enhancement Mode
Datasheetpdf iconHXY MOSFET CMS120N080B-HXY
In-Stock: 5
5 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 12.5338$ 12.53
10+$ 10.8139$ 108.14
50+$ 9.7652$ 488.26
100+$ 8.8863$ 888.63
Standard Packaging50/Full Tube

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-263-7L
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)57pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)3.9pF
RDS(on)85mΩ
Number1 N-channel
Input Capacitance(Ciss)920pF
Gate Charge(Qg)40nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Features

AI Translation
  • High blocking voltage and low on-resistance
  • High-speed switching and low capacitance
  • Avalanche ruggedness

Applications

AI Translation
  • Solar inverters
  • Switch-mode power supplies
  • Auxiliary power supplies
  • Smart meters