HXY MOSFET IMZA65R048M1H-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IMZA65R048M1H-HXY
LCSC Part #	C45896859
Packaging	TO-247-4L
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET IMZA65R048M1H-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247-4L
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	53A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	250mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel

In-Stock: 22

22 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 5.6479	$ 5.65
10+	$ 4.8286	$ 48.29
30+	$ 4.3409	$ 130.23
90+	$ 3.8484	$ 346.36
510+	$ 3.6215	$ 1846.97
990+	$ 3.5201	$ 3484.90
Standard Packaging30/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247-4L
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	53A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	250mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel