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HXY MOSFET IMBG120R090M1HXTMA1-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IMBG120R090M1HXTMA1-HXY |
| LCSC Part # | C45896858 |
| Packaging | TO-263-7L |
| Customer # | |
| Key Attributes | SiC Power MOSFET N-Channel Enhancement Mode |
| Datasheet |  HXY MOSFET IMBG120R090M1HXTMA1-HXY |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 57pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.9pF | |
| RDS(on) | 85mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 40nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High blocking voltage and low on-resistance
- High-speed switching and low capacitance
- Avalanche ruggedness
Applications
AI Translation
- Solar inverters
- Switch-mode power supplies
- Auxiliary power supplies
- Smart meters
In-Stock: 16
16 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.533 | $ 5.53 |
| 10+ | $ 4.7743 | $ 47.74 |
| 30+ | $ 4.3123 | $ 129.37 |
| 100+ | $ 3.9232 | $ 392.32 |
Standard Packaging800/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 57pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.9pF | |
| RDS(on) | 85mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 40nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High blocking voltage and low on-resistance
- High-speed switching and low capacitance
- Avalanche ruggedness
Applications
AI Translation
- Solar inverters
- Switch-mode power supplies
- Auxiliary power supplies
- Smart meters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |