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ST STD100N10F7
| Manufacturer | |
| MPN | STD100N10F7 |
| LCSC Part # | C457507 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 80A DPAK |
| Datasheet |  ST STD100N10F7 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 823pF | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.369nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
In-Stock: 3,871
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7377 | $ 0.74 |
| 10+ | $ 0.6629 | $ 6.63 |
| 30+ | $ 0.6207 | $ 18.62 |
| 100+ | $ 0.5755 | $ 57.55 |
| 500+ | $ 0.5537 | $ 276.85 |
| 1,000+ | $ 0.5443 | $ 544.30 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 823pF | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.369nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |