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ST STD13N60M2 product image
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ST STD13N60M2RoHS

Manufacturer
ST
MPN
STD13N60M2
LCSC Part #
C457506
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 11A DPAK
Datasheetpdf iconST STD13N60M2
In-Stock: 1,197
1,197 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6611$ 0.66
10+$ 0.5299$ 5.30
30+$ 0.4635$ 13.91
100+$ 0.3986$ 39.86
500+$ 0.3598$ 179.90
1,000+$ 0.3403$ 340.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
Gate Charge(Qg)17nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications