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ST STD8N60DM2RoHS

Manufacturer
ST
MPN
STD8N60DM2
LCSC Part #
C457504
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 8A DPAK
Datasheetpdf iconST STD8N60DM2
In-Stock: 109
109 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9074$ 0.91
10+$ 0.8846$ 8.85
30+$ 0.8684$ 26.05
100+$ 0.8537$ 85.37
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage600V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.89pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)449pF
Gate Charge(Qg)13.5nC@480V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications