LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STD4NK80ZT4 product image
  • STD4NK80ZT4 thumbnail 1
  • STD4NK80ZT4 thumbnail 2
  • STD4NK80ZT4 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STD4NK80ZT4RoHS

Manufacturer
ST
MPN
STD4NK80ZT4
LCSC Part #
C457503
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 800V 3A DPAK
Datasheetpdf iconST STD4NK80ZT4
In-Stock: 438
438 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.866$ 0.87
10+$ 0.7066$ 7.07
30+$ 0.6262$ 18.79
100+$ 0.5473$ 54.73
500+$ 0.499$ 249.50
1,000+$ 0.4749$ 474.90
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation80W
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)575pF
Gate Charge(Qg)22.5nC@10V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications

AI Translation
  • Switching application