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ST STD10P6F6 product image
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ST STD10P6F6RoHS

Manufacturer
ST
MPN
STD10P6F6
LCSC Part #
C457501
Packaging
DPAK
Customer #
Key Attributes
MOSFET P-CH 60V 10A DPAK
Datasheetpdf iconST STD10P6F6
In-Stock: 285
285 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9726$ 0.97
10+$ 0.7758$ 7.76
30+$ 0.6766$ 20.30
100+$ 0.5774$ 57.74
500+$ 0.5188$ 259.40
1,000+$ 0.4896$ 489.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)160mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)340pF
Gate Charge(Qg)6.4nC@30V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices are P-channel power MOSFETs developed using STripFET™ F6 technology, featuring a novel trench gate structure. The resulting power MOSFETs exhibit extremely low RDS(ON) across all package types.

Features

AI Translation
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

AI Translation
  • Switching applications