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ST STD7N80K5RoHS

Manufacturer
ST
MPN
STD7N80K5
LCSC Part #
C457497
Packaging
DPAK
Customer #
Key Attributes
800V 6A 3V 110W 950mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS
Datasheetpdf iconST STD7N80K5
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.7172$ 3.72
10+$ 3.298$ 32.98
30+$ 3.0365$ 91.10
100+$ 2.77$ 277.00
500+$ 2.6482$ 1324.10
1,000+$ 2.5962$ 2596.20
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage800V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF
Gate Charge(Qg)13.4nC@640V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This ultra-high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a significantly reduced on-resistance and ultra-low gate charge, making it ideal for applications with extremely demanding power density and efficiency requirements.

Features

AI Translation
  • Industry-lowest R DS(on) × area
  • Industry-best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications