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ST STN3P6F6RoHS

Manufacturer
ST
MPN
STN3P6F6
LCSC Part #
C457494
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 60V 3A SOT-223
Datasheetpdf iconST STN3P6F6
In-Stock: 353
353 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6707$ 0.67
10+$ 0.5372$ 5.37
30+$ 0.4704$ 14.11
100+$ 0.4037$ 40.37
500+$ 0.3484$ 174.20
1,000+$ 0.3288$ 328.80
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingSOT-223
Drain to Source Voltage60V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)160mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)340pF
Gate Charge(Qg)6.4nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

AI Translation
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

AI Translation
  • Switching applications