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ST STW12N120K5RoHS

Manufacturer
ST
MPN
STW12N120K5
LCSC Part #
C457468
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 1.2kV 12A TO-247
Datasheetpdf iconST STW12N120K5
In-Stock: 143
143 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 10.994$ 10.99
10+$ 9.8515$ 98.52
30+$ 9.1549$ 274.65
100+$ 8.5706$ 857.06
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Worldwide best FOM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications