ST STP20NK50Z
| Manufacturer | |
| MPN | STP20NK50Z |
| LCSC Part # | C457449 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 500V 17A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 17A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 270mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 119nC@400V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
Applications
AI Translation
- Switching applications
Out of Stock
Notify Me
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.558 | $ 2.56 |
| 10+ | $ 2.1602 | $ 21.60 |
| 50+ | $ 1.9107 | $ 95.54 |
| 100+ | $ 1.6564 | $ 165.64 |
| 500+ | $ 1.5423 | $ 771.15 |
| 1,000+ | $ 1.4918 | $ 1491.80 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 17A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 270mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 119nC@400V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
Applications
AI Translation
- Switching applications
C457449 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



