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ST STP4N150
| Manufacturer | |
| MPN | STP4N150 |
| LCSC Part # | C457448 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 1.5kV 4A TO-220 |
| Datasheet |  ST STP4N150 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 1.5kV | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 50nC@600V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using the well consolidated high voltage MESH OVERLAY process, an advanced family of very high voltage Power MOSFETs with outstanding performances has been designed. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Features
AI Translation
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
Applications
AI Translation
- Switching applications
In-Stock: 156
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.1307 | $ 4.13 |
| 10+ | $ 3.6408 | $ 36.41 |
| 50+ | $ 3.3332 | $ 166.66 |
| 100+ | $ 3.0191 | $ 301.91 |
| 500+ | $ 2.8775 | $ 1438.75 |
| 1,000+ | $ 2.8157 | $ 2815.70 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 1.5kV | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 50nC@600V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using the well consolidated high voltage MESH OVERLAY process, an advanced family of very high voltage Power MOSFETs with outstanding performances has been designed. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Features
AI Translation
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |