LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STP150N10F7 product image
  • STP150N10F7 thumbnail 1
  • STP150N10F7 thumbnail 2
  • STP150N10F7 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STP150N10F7RoHS

Manufacturer
ST
MPN
STP150N10F7
LCSC Part #
C457440
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 100V 110A TO-220
Datasheetpdf iconST STP150N10F7
In-Stock: 211
211 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7925$ 1.79
10+$ 1.5216$ 15.22
50+$ 1.2831$ 64.16
100+$ 1.1144$ 111.44
500+$ 1.0398$ 519.90
1,000+$ 1.0057$ 1005.70
Standard Packaging50/Full Tube
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.115nF
Gate Charge(Qg)117nC@50V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These N-channel power MOSFETs utilize STripFET™ F7 technology with an advanced trench gate structure, achieving ultra-low on-resistance while reducing internal capacitance and gate charge for faster, more efficient switching operation.

Features

AI Translation
  • One of the lowest R<sub>DS(ON)</sub> on the market
  • Excellent figure of merit (FoM)
  • Low C<sub>rss</sub>/C<sub>iss</sub> ratio for enhanced EMI immunity
  • High avalanche ruggedness

Applications

AI Translation
  • Switching applications