VBsemi Elec AOSD62666E-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | AOSD62666E-VB |
| LCSC Part # | C45662500 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 7A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 110pF | |
| Current - Continuous Drain(Id) | 7A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 11.7nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOS FET
- 100 % Rg and UIS tested
In-Stock: 10
10 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5938$ 0.5642 | $ 0.56 |
| 10+ | $ 0.4827$ 0.4586 | $ 4.59 |
| 30+ | $ 0.4271$ 0.4058 | $ 12.17 |
| 100+ | $ 0.3732$ 0.3546 | $ 35.46 |
| 500+ | $ 0.3398$ 0.3229 | $ 161.45 |
| 1,000+ | $ 0.3224$ 0.3063 | $ 306.30 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



