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onsemi FDMS86150RoHS

Manufacturer
onsemi
MPN
FDMS86150
LCSC Part #
C455161
Packaging
Power56-8
Customer #
Key Attributes
MOSFET N-CH 100V 80A Power56-8
Datasheetpdf icononsemi FDMS86150
In-Stock: 48
48 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.171$ 3.17
10+$ 2.6895$ 26.90
30+$ 2.388$ 71.64
100+$ 2.0784$ 207.84
500+$ 1.9389$ 969.45
1,000+$ 1.879$ 1879.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower56-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)7.8mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)3.055nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=4.85 mΩ at VGS = 10 Vs , ID=16 A
  • Max rDS(on)=7.8 mΩ at VGS = 6 V , ID=13 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • Primary DC-DC MOSFET
  • Secondary Synchronous Rectifier
  • Load Switch