onsemi FDMS86263P
| Manufacturer | |
| MPN | FDMS86263P |
| LCSC Part # | C455156 |
| Packaging | PQFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET P-CH 150V 22A DFN-8(4.9x5.8) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 22A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.905nF |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=53 mΩ at VGS=-10 V, ID=-4.4 A
- Max rDS(on)=64 mΩ at VGS=-6 V, ID=-4 A
- Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
- 100% Uil Tested
- This Device is Pb−Free and is RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
In-Stock: 1,005
1,005 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8916 | $ 0.89 |
| 10+ | $ 0.7156 | $ 7.16 |
| 30+ | $ 0.6276 | $ 18.83 |
| 100+ | $ 0.5346 | $ 53.46 |
| 500+ | $ 0.4825 | $ 241.25 |
| 1,000+ | $ 0.4548 | $ 454.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 22A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.905nF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=53 mΩ at VGS=-10 V, ID=-4.4 A
- Max rDS(on)=64 mΩ at VGS=-6 V, ID=-4 A
- Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
- 100% Uil Tested
- This Device is Pb−Free and is RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



