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onsemi FDD86110RoHS

Manufacturer
onsemi
MPN
FDD86110
LCSC Part #
C455153
Packaging
DPAK(TO-252)
Customer #
Key Attributes
MOSFET N-CH 100V 50A DPAK(TO-252)
Datasheetpdf icononsemi FDD86110
In-Stock: 2,395
2,395 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8989$ 1.90
10+$ 1.6055$ 16.06
30+$ 1.4213$ 42.64
100+$ 1.2322$ 123.22
500+$ 1.1475$ 573.75
1,000+$ 1.1116$ 1111.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK(TO-252)
Drain to Source Voltage100V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation127W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)10.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.265nF
Gate Charge(Qg)35nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using an advanced PowerTrench process with integrated shield gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Shielded gate MOSFET technology
  • Maximum rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
  • Maximum rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
  • 100% UIS tested
  • RoHS compliant

Applications

AI Translation
  • DC-DC conversion