Nexperia BSS87,115
| Manufacturer | |
| MPN | BSS87,115 |
| LCSC Part # | C455067 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 400mA SOT-89 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-89 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 400mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 580mW;12.5W | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 120pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
Features
AI Translation
- Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.
- Very fast switching
- No secondary breakdown
Applications
AI Translation
- Relay driver
- High-speed line driver
- Load-side loadswitch Switching circuits
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5952 | $ 0.60 |
| 10+ | $ 0.4925 | $ 4.93 |
| 30+ | $ 0.4484 | $ 13.45 |
| 100+ | $ 0.393 | $ 39.30 |
| 500+ | $ 0.3685 | $ 184.25 |
| 1,000+ | $ 0.3539 | $ 353.90 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-89 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 400mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 580mW;12.5W | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 120pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
Features
AI Translation
- Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.
- Very fast switching
- No secondary breakdown
Applications
AI Translation
- Relay driver
- High-speed line driver
- Load-side loadswitch Switching circuits
C455067 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



