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Nexperia BC847BV,115
| Manufacturer | |
| MPN | BC847BV,115 |
| LCSC Part # | C455062 |
| Packaging | SOT-666-6 |
| Customer # | |
| Key Attributes | TRANS NPN 45V 100mA SOT-666-6 |
| Datasheet |  Nexperia BC847BV,115 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666-6 | |
| Current - Collector Cutoff | 5uA | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 300mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | NPN | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -65℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN double transistor in an ultra small SOT666 flat lead plastic package. PNP complement: BC857BV
Features
AI Translation
- 300 mW total power dissipation
- Very small 1.6 mm×1.2 mm×0.55 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector capacitance
- Improved thermal behaviour due to flat leads
- Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
- Reduces required board space
- Reduces pick and place costs
Applications
AI Translation
- General purpose switching and amplification
In-Stock: 135
135 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2073 | $ 1.04 |
| 50+ | $ 0.1787 | $ 8.94 |
| 150+ | $ 0.1644 | $ 24.66 |
| 500+ | $ 0.1536 | $ 76.80 |
| 2,500+ | $ 0.145 | $ 362.50 |
| 4,000+ | $ 0.1408 | $ 563.20 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666-6 | |
| Current - Collector Cutoff | 5uA | |
| DC Current Gain | 200 | |
| Pd - Power Dissipation | 300mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | NPN | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -65℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN double transistor in an ultra small SOT666 flat lead plastic package. PNP complement: BC857BV
Features
AI Translation
- 300 mW total power dissipation
- Very small 1.6 mm×1.2 mm×0.55 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector capacitance
- Improved thermal behaviour due to flat leads
- Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
- Reduces required board space
- Reduces pick and place costs
Applications
AI Translation
- General purpose switching and amplification
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |