Nexperia NX3008PBKW,115
| Manufacturer | |
| MPN | NX3008PBKW,115 |
| LCSC Part # | C455036 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 200mA SOT-323 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 260mW;830mW | |
| RDS(on) | 4.1Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 46pF | |
| Gate Charge(Qg) | 720pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Ultra-fast switching speed
- ESD protection up to 2 kV
- Low threshold voltage
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
In-Stock: 2,890
2,890 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0906 | $ 0.45 |
| 50+ | $ 0.0711 | $ 3.56 |
| 150+ | $ 0.0613 | $ 9.20 |
| 500+ | $ 0.0539 | $ 26.95 |
| 3,000+ | $ 0.0481 | $ 144.30 |
| 6,000+ | $ 0.0451 | $ 270.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 260mW;830mW | |
| RDS(on) | 4.1Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 46pF | |
| Gate Charge(Qg) | 720pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Ultra-fast switching speed
- ESD protection up to 2 kV
- Low threshold voltage
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



