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Infineon IPW60R037CSFDRoHS

Manufacturer
Infineon
MPN
IPW60R037CSFD
LCSC Part #
C454260
Packaging
TO-247-3
Customer #
Key Attributes
MOSFET N-CH 600V 54A TO-247-3
Datasheetpdf iconInfineon IPW60R037CSFD
In-Stock: 177
177 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.1008$ 4.10
10+$ 3.59$ 35.90
30+$ 2.8157$ 84.47
90+$ 2.5083$ 225.75
510+$ 2.3668$ 1207.07
990+$ 2.3033$ 2280.27
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
Drain to Source Voltage600V
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.623nF
Gate Charge(Qg)136nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the super junction (SJ) principle. The IPW60R037CSFD is an optimized device tailored to meet the demands of the off-board electric vehicle charging market. With low gate charge (Qg) and improved switching characteristics, it achieves the highest efficiency in its target market. In addition, it integrates a fast body diode that significantly reduces reverse recovery charge (Qrr), enabling exceptional reliability in resonant topologies. With these features, the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV charging station market while supporting high power density solutions.

Features

AI Translation
  • Fast body diode
  • Industry-leading reverse recovery charge (Qrr)
  • Lowest figure of merit Rds(ON)*QG and Rds(ON)*Eoss
  • Cost-optimized

Applications

AI Translation
  • Soft-switching and hard-switching topologies
  • Phase-shifted full-bridge (ZVS), LLC, and PFC applications — EV charging