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Infineon IKW75N65EH5 product image
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Infineon IKW75N65EH5RoHS

Manufacturer
Infineon
MPN
IKW75N65EH5
LCSC Part #
C454259
Packaging
TO-247-3
Customer #
Key Attributes
High speed series fifth generation High speed 5 IGBT in TRENCHSTOP 5 technology copacked with full-rated RAPiD 1 fast and soft antiparallel diode
Datasheetpdf iconInfineon IKW75N65EH5

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation395W
Td(off)174ns
Operating Temperature-40℃~+175℃
Td(on)28ns
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)17pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.75mA
Vce Saturation(VCE(sat))2.1V@75A,15V
Reverse Recovery Time(trr)92ns
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)2.3mJ
Input Capacitance(Cies)4.2nF
Gate Charge(Qg)160nC@15V
Output Capacitance(Coes)130pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • High speed H5 technology offering
  • Best-in-Class efficiency in hard switching and resonant topologies
  • Plug and play replacement of previous generation IGBTs
  • 650V breakdown voltage
  • Low gate charge QG
  • IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode
  • Maximum junction temperature 175℃
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

Applications

AI Translation
  • Uninterruptible power supplies
  • Solar converters
  • Welding converters
  • Mid to high range switching frequency converters
In-Stock: 4,603
4,603 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.7695$ 2.77
10+$ 2.2815$ 22.82
30+$ 1.9766$ 59.30
90+$ 1.6621$ 149.59
480+$ 1.521$ 730.08
960+$ 1.4594$ 1401.02
Standard Packaging30/Full Tube
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