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Cmos CMD60R360D product image
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Cmos CMD60R360DRoHS

Manufacturer
CmosAsian Brands
MPN
CMD60R360D
LCSC Part #
C45385087
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 600V 11A TO-252
Datasheetpdf iconCmos CMD60R360D
In-Stock: 1,431
1,431 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5799$ 0.5510$ 0.55
10+$ 0.4727$ 0.4491$ 4.49
30+$ 0.4273$ 0.4060$ 12.18
100+$ 0.3704$ 0.3519$ 35.19
500+$ 0.2957$ 0.2810$ 140.50
1,000+$ 0.2811$ 0.2671$ 267.10
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerCmos
PackagingTO-252
Output Capacitance(Coss)190pF
Pd - Power Dissipation85W
Configuration-
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)32nC@10V
Vgs±30V
TypeN-Channel
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Introduction

AI Translation

The 60R360D is power MOSFET using Cmos’s advanced super junction technology that can realize very low on resistance, gate charge and reduced tendency for ringing. As a result, its switching loss is very low, making it optimized for switching applications. Moreover, these user friendly devices offer the advantages of improved ruggedness and remarkable ESD capability by integrated Zener diode, making it an ideal choice for designers.

Features

AI Translation
  • Multi-layer Epitaxial Chip Technology
  • Low On-Resistance
  • 100% avalanche tested
  • RoHS Compliant

Applications

AI Translation
  • Adapter PFC power supply stages
  • DC-DC converters