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DOINGTER DOD80N06RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOD80N06
LCSC Part #
C45384965
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 80A TO-252
Datasheetpdf iconDOINGTER DOD80N06
In-Stock: 6,905
6,905 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.2047$ 1.02
50+$ 0.1603$ 8.02
150+$ 0.1413$ 21.20
500+$ 0.1176$ 58.80
2,500+$ 0.107$ 267.50
5,000+$ 0.1007$ 503.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)272pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
Gate Charge(Qg)90.3nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 80 A, RDS(ON) < 6.5 mΩ (typical 5.5 mΩ at VGS = 10 V)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell-density trench technology for ultra-low RDS(ON).
  • Excellent package with good thermal dissipation performance.
  • Moisture Sensitivity Level 3 (MSL3)