onsemi UJ4SC075011K4S
| Manufacturer | |
| MPN | UJ4SC075011K4S |
| LCSC Part # | C45343225 |
| Packaging | TO-247-4 |
| Customer # | |
| Key Attributes | TO-247-4 JFETs RoHS |
| Datasheet |  onsemi UJ4SC075011K4S |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
UJ4SC075011K4S is a 750 V, 11 mΩ G4 SiC FET. It is based on a unique "cascode" circuit configuration that co-packages a normally-on SiC JFET with a Si MOSFET to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable it to serve as a drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or silicon superjunction devices. Housed in a TO-247-4L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance R<sub>DS(on)</sub>: 11 mΩ (typical)
- Operating temperature: 175 °C (maximum)
- Excellent reverse recovery characteristics: Q<sub>rr</sub> = 288 nC
- Low body diode forward voltage V<sub>FSD</sub>: 1.1 V
- Low gate charge: Q<sub>G</sub> = 75 nC
- Threshold voltage V<sub>G(th)</sub>: 4.5 V (typical), supports 0 to 15 V drive
- Low intrinsic capacitance
- ESD protection: compliant with Human Body Model Level 2
- TO-247-4L package for faster switching speed and cleaner gate waveform
- Lead-free, halogen-free, RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 43.4989 | $ 43.50 |
| 30+ | $ 41.5116 | $ 1245.35 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
UJ4SC075011K4S is a 750 V, 11 mΩ G4 SiC FET. It is based on a unique "cascode" circuit configuration that co-packages a normally-on SiC JFET with a Si MOSFET to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable it to serve as a drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or silicon superjunction devices. Housed in a TO-247-4L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance R<sub>DS(on)</sub>: 11 mΩ (typical)
- Operating temperature: 175 °C (maximum)
- Excellent reverse recovery characteristics: Q<sub>rr</sub> = 288 nC
- Low body diode forward voltage V<sub>FSD</sub>: 1.1 V
- Low gate charge: Q<sub>G</sub> = 75 nC
- Threshold voltage V<sub>G(th)</sub>: 4.5 V (typical), supports 0 to 15 V drive
- Low intrinsic capacitance
- ESD protection: compliant with Human Body Model Level 2
- TO-247-4L package for faster switching speed and cleaner gate waveform
- Lead-free, halogen-free, RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |