onsemi UJ4SC075009B7S
| Manufacturer | |
| MPN | UJ4SC075009B7S |
| LCSC Part # | C45343222 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | TO-263-7 JFETs RoHS |
| Datasheet |  onsemi UJ4SC075009B7S |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The UJ4SC075009B7S is a 750V, 9mΩ G4 SiC FET. It is based on a unique cascode circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable true drop-in replacement of Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Available in a TO-263-7 package, this device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 9 mΩ (typical)
- Operating temperature: 175°C (maximum)
- Excellent reverse recovery: Qrr = 338 nC
- Low body diode forward voltage VFSD: 1.1V
- Low gate charge: QG = 75 nC
- Threshold voltage VG(th): 4.5V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: Human Body Model Level 2
- TO-263-7 package for faster switching speed and clean gate waveform
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 44.159 | $ 44.16 |
| 30+ | $ 42.1421 | $ 1264.26 |
Standard Packaging800/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The UJ4SC075009B7S is a 750V, 9mΩ G4 SiC FET. It is based on a unique cascode circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable true drop-in replacement of Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Available in a TO-263-7 package, this device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 9 mΩ (typical)
- Operating temperature: 175°C (maximum)
- Excellent reverse recovery: Qrr = 338 nC
- Low body diode forward voltage VFSD: 1.1V
- Low gate charge: QG = 75 nC
- Threshold voltage VG(th): 4.5V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: Human Body Model Level 2
- TO-263-7 package for faster switching speed and clean gate waveform
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |