- Pinout Diagram
- Footprint Diagram
onsemi UF3C065080T3S
| Manufacturer | |
| MPN | UF3C065080T3S |
| LCSC Part # | C45343118 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | TO-220-3 JFETs RoHS |
| Datasheet |  onsemi UF3C065080T3S |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This SiC FET device is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a true "drop-in replacement" for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO220-3 package, the device offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads when used with the recommended RC snubber circuit, as well as any application requiring standard gate drive.
Features
- Typical on-resistance R_DS(on),typ of 80 mΩ
- Maximum operating temperature of 175℃
- Excellent reverse recovery characteristics
- Low gate charge
- Low intrinsic capacitance
- ESD protection compliant with HBM Class 2
- Ultra-low switching losses (RC snubber circuit losses negligible under typical operating conditions)
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.6246 | $ 7.62 |
| 10+ | $ 7.4279 | $ 74.28 |
| 50+ | $ 7.2951 | $ 364.76 |
| 100+ | $ 7.1639 | $ 716.39 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This SiC FET device is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a true "drop-in replacement" for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO220-3 package, the device offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads when used with the recommended RC snubber circuit, as well as any application requiring standard gate drive.
Features
- Typical on-resistance R_DS(on),typ of 80 mΩ
- Maximum operating temperature of 175℃
- Excellent reverse recovery characteristics
- Low gate charge
- Low intrinsic capacitance
- ESD protection compliant with HBM Class 2
- Ultra-low switching losses (RC snubber circuit losses negligible under typical operating conditions)
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |