onsemi UJ4C075060K4S
| Manufacturer | |
| MPN | UJ4C075060K4S |
| LCSC Part # | C45082801 |
| Packaging | TO-247-4 |
| Customer # | |
| Key Attributes | TO-247-4 JFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
UJ4C075060K4S is a 750V, 58mΩ G4 SiC FET. It is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable true "plug-and-play" replacement of Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a TO247-4 package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 58mΩ (typical)
- Operating temperature: 175°C (maximum)
- Excellent reverse recovery: Qrr = 52nC
- Low body diode VFSD: 1.31V
- Low gate charge: QG = 37.8nC
- Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: HBM Class 2
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 14.041 | $ 14.04 |
| 10+ | $ 13.4148 | $ 134.15 |
| 30+ | $ 12.3282 | $ 369.85 |
| 90+ | $ 11.3815 | $ 1024.34 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-4 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
UJ4C075060K4S is a 750V, 58mΩ G4 SiC FET. It is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable true "plug-and-play" replacement of Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a TO247-4 package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 58mΩ (typical)
- Operating temperature: 175°C (maximum)
- Excellent reverse recovery: Qrr = 52nC
- Low body diode VFSD: 1.31V
- Low gate charge: QG = 37.8nC
- Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: HBM Class 2
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |

