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onsemi UJ4C075060K4S product image
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onsemi UJ4C075060K4SRoHS

Manufacturer
MPN
UJ4C075060K4S
LCSC Part #
C45082801
Packaging
TO-247-4
Customer #
Key Attributes
TO-247-4 JFETs RoHS
Datasheetpdf icononsemi UJ4C075060K4S
In-Stock: 10
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QtyUnit PriceTotal Amount
1+$ 14.041$ 14.04
10+$ 13.4148$ 134.15
30+$ 12.3282$ 369.85
90+$ 11.3815$ 1024.34
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/JFETs
Manufactureronsemi
PackagingTO-247-4

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

UJ4C075060K4S is a 750V, 58mΩ G4 SiC FET. It is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to produce a normally-off SiC FET device. The standard gate drive characteristics of this device enable true "plug-and-play" replacement of Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a TO247-4 package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Features

AI Translation
  • On-resistance RDS(on): 58mΩ (typical)
  • Operating temperature: 175°C (maximum)
  • Excellent reverse recovery: Qrr = 52nC
  • Low body diode VFSD: 1.31V
  • Low gate charge: QG = 37.8nC
  • Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
  • Low intrinsic capacitance
  • ESD protection: HBM Class 2
  • Lead-free, halogen-free, and RoHS compliant

Applications

AI Translation
  • Electric vehicle charging
  • Photovoltaic inverters
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating