onsemi UF3C120150B7S
| Manufacturer | |
| MPN | UF3C120150B7S |
| LCSC Part # | C45082714 |
| Packaging | D2PAK-7 |
| Customer # | |
| Key Attributes | D2PAK-7 JFETs RoHS |
| Datasheet |  onsemi UF3C120150B7S |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-7 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This SiC FET device is based on a unique cascode circuit configuration, co-packaging a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET. The device features standard gate drive characteristics and serves as a drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-263-7 package, it offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 150 mΩ (typical)
- Operating temperature: 175℃ (maximum)
- Excellent reverse recovery characteristics: Qrr = 67 nC
- Low body diode forward voltage drop: 1.46 V
- Low gate charge: QG = 25.7 nC
- Threshold voltage VG(th): 4.4 V (typical), supports 0 to 15 V gate drive
- Package creepage distance and clearance > 6.1 mm
- Kelvin source pin for optimized switching performance
- ESD protection, Human Body Model Level 2
- Lead-free, halogen-free, RoHS compliant
Applications
- Telecom and server power supplies
- Industrial power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.7272 | $ 8.73 |
| 10+ | $ 8.5041 | $ 85.04 |
| 30+ | $ 8.3554 | $ 250.66 |
| 100+ | $ 8.2067 | $ 820.67 |
Standard Packaging800/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-7 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This SiC FET device is based on a unique cascode circuit configuration, co-packaging a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET. The device features standard gate drive characteristics and serves as a drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-263-7 package, it offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 150 mΩ (typical)
- Operating temperature: 175℃ (maximum)
- Excellent reverse recovery characteristics: Qrr = 67 nC
- Low body diode forward voltage drop: 1.46 V
- Low gate charge: QG = 25.7 nC
- Threshold voltage VG(th): 4.4 V (typical), supports 0 to 15 V gate drive
- Package creepage distance and clearance > 6.1 mm
- Kelvin source pin for optimized switching performance
- ESD protection, Human Body Model Level 2
- Lead-free, halogen-free, RoHS compliant
Applications
- Telecom and server power supplies
- Industrial power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |