MACOM MA4AGBLP912

MA4AGBLP912 is an aluminum gallium arsenide (AlGaAs) anode-enhanced beam lead PIN diode. Its AlGaAs anode employs MACOM's patented heterojunction technology, which provides lower "on" resistance compared to conventional GaAs or silicon devices. This device is fabricated in an OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The resulting diode features low series resistance (4Ω), low capacitance (28fF), and very fast switching speed (5ns). It is fully passivated with silicon nitride and additionally coated with a polymer overcoat to prevent scratching. This protective coating guards against damage to the junction and anode air bridge during handling and assembly.

The ultralow capacitance of the MA4AGBLP912 makes it ideal for applications up to 40GHz when used in shunt configurations. The low RC product and low profile of beam lead PIN diodes make them suitable for microwave switch designs requiring low insertion loss and high isolation. The operating bias conditions are +10mA in the low-loss state and 0V in the isolation state, allowing the use of a simple +5V TTL gate driver. AlGaAs beam lead diodes are applicable in switching arrays for radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other broadband multi-throw switch assemblies.

• Low series resistance
• Low capacitance
• 5ns switching speed
• Drivable by buffered +5V TTL
• Silicon nitride passivation
• Polyimide scratch protection
• RoHS compliant