DIODES DMG4511SK4-13
| Manufacturer | |
| MPN | DMG4511SK4-13 |
| LCSC Part # | C445515 |
| Packaging | TO-252-4L |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 35V 13A TO-252-4L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TO-252-4L | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 13A;12A | |
| RDS(on) | 35mΩ@10V;45mΩ@10V | |
| Pd - Power Dissipation | 8.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 35V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51.9pF;75.3pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 850pF;985.2pF | |
| Gate Charge(Qg) | 18.7nC@10V;19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 64.7pF;90.6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TO-252-4L | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 13A;12A | |
| RDS(on) | 35mΩ@10V;45mΩ@10V | |
| Pd - Power Dissipation | 8.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 35V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51.9pF;75.3pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 850pF;985.2pF | |
| Gate Charge(Qg) | 18.7nC@10V;19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 64.7pF;90.6pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm ultra-thin profile — ideal for slim applications
- 4mm² PCB footprint
- Low gate threshold voltage
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- AEC-Q101 qualified for high reliability
Applications
AI Translation
- Backlight Illumination - DC-DC Converter - Power Management Function
In-Stock: 49
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2006 | $ 1.20 |
| 10+ | $ 1.0284 | $ 10.28 |
| 30+ | $ 0.9423 | $ 28.27 |
| 100+ | $ 0.8562 | $ 85.62 |
| 500+ | $ 0.8042 | $ 402.10 |
| 1,000+ | $ 0.7782 | $ 778.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TO-252-4L | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 13A;12A | |
| RDS(on) | 35mΩ@10V;45mΩ@10V | |
| Pd - Power Dissipation | 8.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 35V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51.9pF;75.3pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 850pF;985.2pF | |
| Gate Charge(Qg) | 18.7nC@10V;19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 64.7pF;90.6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TO-252-4L | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 13A;12A | |
| RDS(on) | 35mΩ@10V;45mΩ@10V | |
| Pd - Power Dissipation | 8.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 35V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51.9pF;75.3pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 850pF;985.2pF | |
| Gate Charge(Qg) | 18.7nC@10V;19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 64.7pF;90.6pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm ultra-thin profile — ideal for slim applications
- 4mm² PCB footprint
- Low gate threshold voltage
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- AEC-Q101 qualified for high reliability
Applications
AI Translation
- Backlight Illumination - DC-DC Converter - Power Management Function
C445515 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



