onsemi FGA60N65SMD
| Manufacturer | |
| MPN | FGA60N65SMD |
| LCSC Part # | C444004 |
| Packaging | TO-3PN |
| Customer # | |
| Key Attributes | 600W 120A 650V FS (Field Stop) TO-3PN Single IGBTs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-3PN | |
| Pd - Power Dissipation | 600W | |
| Td(off) | 104ns | |
| Operating Temperature | -55℃~+175℃ | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V | |
| Collector Cut-Off Current (Ices) | 250uA | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 450uJ | |
| Turn-On Energy (Eon) | 1.54mJ | |
| Input Capacitance(Cies) | 2.915nF | |
| Gate Charge(Qg) | 189nC@15V | |
| Output Capacitance(Coes) | 270pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-3PN | |
| Pd - Power Dissipation | 600W | |
| Td(off) | 104ns | |
| Operating Temperature | -55℃~+175℃ | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 85pF |
| Type | Description | |
|---|---|---|
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V | |
| Collector Cut-Off Current (Ices) | 250uA | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 450uJ | |
| Turn-On Energy (Eon) | 1.54mJ | |
| Input Capacitance(Cies) | 2.915nF | |
| Gate Charge(Qg) | 189nC@15V | |
| Output Capacitance(Coes) | 270pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Fairchild Semiconductor's new Field-Stop Generation 2 IGBT series employs innovative field-stop IGBT technology, delivering optimal performance for applications where low conduction and switching losses are critical, including solar inverters, UPS, welding machines, communication power supplies, ESS, and PFC.
Applications
AI Translation
- Photovoltaic inverters
- UPS
- Welding machines
- PFC
- Telecom power supplies
- ESS
In-Stock: 3,408
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.0058 | $ 3.01 |
| 10+ | $ 2.5815 | $ 25.82 |
| 30+ | $ 2.0126 | $ 60.38 |
| 90+ | $ 1.7395 | $ 156.56 |
| 450+ | $ 1.6175 | $ 727.88 |
| 900+ | $ 1.5639 | $ 1407.51 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-3PN | |
| Pd - Power Dissipation | 600W | |
| Td(off) | 104ns | |
| Operating Temperature | -55℃~+175℃ | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V | |
| Collector Cut-Off Current (Ices) | 250uA | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 450uJ | |
| Turn-On Energy (Eon) | 1.54mJ | |
| Input Capacitance(Cies) | 2.915nF | |
| Gate Charge(Qg) | 189nC@15V | |
| Output Capacitance(Coes) | 270pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-3PN | |
| Pd - Power Dissipation | 600W | |
| Td(off) | 104ns | |
| Operating Temperature | -55℃~+175℃ | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 85pF |
| Type | Description | |
|---|---|---|
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V | |
| Collector Cut-Off Current (Ices) | 250uA | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 450uJ | |
| Turn-On Energy (Eon) | 1.54mJ | |
| Input Capacitance(Cies) | 2.915nF | |
| Gate Charge(Qg) | 189nC@15V | |
| Output Capacitance(Coes) | 270pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Fairchild Semiconductor's new Field-Stop Generation 2 IGBT series employs innovative field-stop IGBT technology, delivering optimal performance for applications where low conduction and switching losses are critical, including solar inverters, UPS, welding machines, communication power supplies, ESS, and PFC.
Applications
AI Translation
- Photovoltaic inverters
- UPS
- Welding machines
- PFC
- Telecom power supplies
- ESS
C444004 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



