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Infineon IMZA65R010M2HXKSA1RoHS

Manufacturer
MPN
IMZA65R010M2HXKSA1
LCSC Part #
C44184291
Packaging
TO-247-4
Customer #
Key Attributes
SICFET 650V 144A TO-247-4
Datasheetpdf iconInfineon IMZA65R010M2HXKSA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 23.5912$ 23.59
10+$ 22.8129$ 228.13
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-4
Drain to Source Voltage650V
ConfigurationHalf-Bridge
Output Capacitance(Coss)297pF
Current - Continuous Drain(Id)144A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation440W
RDS(on)13.1mΩ
Reverse Transfer Capacitance (Crss@Vds)22pF
Number1 N-channel
Input Capacitance(Ciss)4.001nF
Gate Charge(Qg)112nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Features

AI Translation
  • Ultra‑low switching losses
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • .XT interconnection technology for best‑in‑class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives