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Infineon IMW65R060M2HXKSA1 product image
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Infineon IMW65R060M2HXKSA1RoHS

Manufacturer
MPN
IMW65R060M2HXKSA1
LCSC Part #
C44184283
Packaging
TO-247-3
Customer #
Key Attributes
SICFET 650V 96A TO-247-3
Datasheetpdf iconInfineon IMW65R060M2HXKSA1
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
ConfigurationHalf-Bridge
Drain to Source Voltage650V
Current - Continuous Drain(Id)96A
Output Capacitance(Coss)65pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)4.1pF
RDS(on)73mΩ
Number1 N-channel
Input Capacitance(Ciss)669pF
Gate Charge(Qg)19nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Features

AI Translation
  • Ultra‑low switching losses
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • .XT interconnection technology for best‑in‑class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives