AOS AO4620
| Manufacturer | |
| MPN | AO4620 |
| LCSC Part # | C431176 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V SOIC-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | AOS | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.2A;5.3A | |
| RDS(on) | 24mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 448pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO4620 utilizes advanced trench technology MOSFETs to deliver excellent RDS(ON) and low gate charge. Complementary MOSFETs suitable for inverters and other applications.
Features
AI Translation
- N-Channel
- VDS(V) = 30 V
- ID = 7.2 A (VGS = 10 V)
- RDS(ON) < 24mΩ (VGS = 10V)
- RDS(ON) < 36 mΩ (VGS = 4.5 V)
- P-Channel
- -30V
- -5.3A (VGS = -10 V)
- RDS(ON) < 32mΩ (VGS = -10V)
- RDS(ON) < 55 mΩ (VGS = -4.5 V)
- 100% UIS tested
- 100% Rg tested
- Green product
In-Stock: 215
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2112 | $ 1.06 |
| 50+ | $ 0.1742 | $ 8.71 |
| 150+ | $ 0.1584 | $ 23.76 |
| 500+ | $ 0.1387 | $ 69.35 |
| 3,000+ | $ 0.1299 | $ 389.70 |
| 6,000+ | $ 0.1246 | $ 747.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | AOS | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 7.2A;5.3A | |
| RDS(on) | 24mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 448pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO4620 utilizes advanced trench technology MOSFETs to deliver excellent RDS(ON) and low gate charge. Complementary MOSFETs suitable for inverters and other applications.
Features
AI Translation
- N-Channel
- VDS(V) = 30 V
- ID = 7.2 A (VGS = 10 V)
- RDS(ON) < 24mΩ (VGS = 10V)
- RDS(ON) < 36 mΩ (VGS = 4.5 V)
- P-Channel
- -30V
- -5.3A (VGS = -10 V)
- RDS(ON) < 32mΩ (VGS = -10V)
- RDS(ON) < 55 mΩ (VGS = -4.5 V)
- 100% UIS tested
- 100% Rg tested
- Green product
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
