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VISHAY IRF640STRRPBFRoHS

Manufacturer
VISHAY
MPN
IRF640STRRPBF
LCSC Part #
C428750
Packaging
TO-263(D2PAK)
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-263(D2PAK)
Datasheetpdf iconVISHAY IRF640STRRPBF
In-Stock: 49
49 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8784$ 1.88
10+$ 1.6302$ 16.30
30+$ 1.494$ 44.82
100+$ 1.3399$ 133.99
500+$ 1.2718$ 635.90
800+$ 1.2409$ 992.72
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-263(D2PAK)
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.1W;130W
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)70nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (SiHF640L) is available for low-profile applications.

Features

AI Translation
  • Surface mount
  • Low-profile through-hole RoHS
  • Available in tape and reel Available
  • Dynamic dV/dt rating HALOGEN FREE
  • 150 °C operating temperature Available
  • Fast switching
  • Fully avalanche rated