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Nexperia BST82,215RoHS

Manufacturer
MPN
BST82,215
LCSC Part #
C426800
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 100V 190mA SOT-23
Datasheetpdf iconNexperia BST82,215
In-Stock: 2,040
2,040 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2209$ 1.10
50+$ 0.1738$ 8.69
150+$ 0.1536$ 23.04
500+$ 0.1284$ 64.20
3,000+$ 0.1171$ 351.30
6,000+$ 0.1104$ 662.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNexperia
PackagingSOT-23
Drain to Source Voltage100V
Output Capacitance(Coss)8.5pF
Current - Continuous Drain(Id)190mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)10Ω@5V
Number1 N-channel
Input Capacitance(Ciss)40pF
Gate Charge(Qg)-
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23.

Features

AI Translation
  • TrenchMOS™ technology
  • Very fast switching
  • Logic level compatible
  • Subminiature surface mount package

Applications

AI Translation
  • Relay driver
  • High speed line driver
  • Logic level translator