Nexperia BST82,215
| Manufacturer | |
| MPN | BST82,215 |
| LCSC Part # | C426800 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 190mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 10Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23.
Features
AI Translation
- TrenchMOS™ technology
- Very fast switching
- Logic level compatible
- Subminiature surface mount package
Applications
AI Translation
- Relay driver
- High speed line driver
- Logic level translator
In-Stock: 2,040
2,040 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2209 | $ 1.10 |
| 50+ | $ 0.1738 | $ 8.69 |
| 150+ | $ 0.1536 | $ 23.04 |
| 500+ | $ 0.1284 | $ 64.20 |
| 3,000+ | $ 0.1171 | $ 351.30 |
| 6,000+ | $ 0.1104 | $ 662.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 10Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23.
Features
AI Translation
- TrenchMOS™ technology
- Very fast switching
- Logic level compatible
- Subminiature surface mount package
Applications
AI Translation
- Relay driver
- High speed line driver
- Logic level translator
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



